document number: 85194 for technical questions, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.0, 28-jan-10 1 high speed infrared emitti ng diodes, 850 nm, gaalas, dh vsmg2000x01, VSMG2020X01 vishay semiconductors description vsmg2000x01 series are infrared, 850 nm emitting diodes in gaalas (dh) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (smd). features ? package type: surface mount ? package form: gw, rgw ? dimensions (l x w x h in mm): 2.3 x 2.3 x 2.8 ? aec-q101 qualified ? peak wavelength: p = 850 nm ? high reliability ? high radiant power ? high radiant intensity ? angle of half intensity: ? = 12 ? low forward voltage ? suitable for high pulse current operation ? terminal configurations: gullwing or reserve gullwing ? package matches with detector vemd2000x01 series ? floor life: 4 weeks, msl 2a, acc. j-std-020 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition ? find out more about vishay?s automotive grade product requirements at: www.vishay.com/applications applications ? irda compatible data transmission ? ir-illumination (cctv) ? miniature light barrier ? photointerrupters ? optical switch ? shaft encoders ? ir emitter source for proximity applications note test conditions see table ?basic characteristics? note moq: minimum order quantity v smg2000x01 v smg2020x01 21725-2 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) vsmg2000x01 40 12 850 20 VSMG2020X01 40 12 850 20 ordering information ordering code packaging remarks package form vsmg2000x01 tape and reel moq: 6000 pcs, 6000 pcs/reel reverse gullwing VSMG2020X01 tape and reel moq: 6000 pcs, 6000 pcs/reel gullwing absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 85194 2 rev. 1.0, 28-jan-10 vsmg2000x01, VSMG2020X01 vishay semiconductors high speed infrared emitting diodes, 850 nm, gaalas, dh note t amb = 25 c, unless otherwise specified fig. 1 - power dissipation limit vs. ambient temperatur e fig. 2 - forward current limit vs. ambient temperature note t amb = 25 c, unless otherwise specified peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1a power dissipation p v 170 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature acc. figure 9, j-std-020 t sd 260 c thermal resistance junction/ambient j-std-051, leads 7 mm, soldered on pcb r thja 250 k/w absolute maximum ratings parameter test condition symbol value unit 0 20 40 60 8 0 100 120 140 160 1 8 0 010203040506070 8 0 90 100 21341 t am b - am b ient temperat u re (c) p v - po w er dissipation (m w ) r thja = 250 k/ w 0 20 40 60 8 0 100 120 0 10 203040 506070 8 0 90 100 21342 r thja = 250 k/ w t am b - am b ient temperat u re (c) i f - for w ard c u rrent (ma) basic characteristics parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.25 1.45 1.7 v i f = 1 a, t p = 100 s v f 2.3 v temperature coefficient of v f i f = 1 ma tk vf - 1.8 mv/k i f = 100 ma tk vf - 1.1 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 mw/cm 2 c j 125 pf radiant intensity i f = 100 ma, t p = 20 ms i e 20 40 60 mw/sr i f = 1 a, t p = 100 s i e 350 mw/sr radiant power i f = 100 ma, t p = 20 ms e 40 mw temperature coefficient of e i f = 100 ma tk e - 0.35 %/k angle of half intensity ? 12 deg peak wavelength i f = 30 ma p 830 850 870 nm spectral bandwidth i f = 30 ma ? 35 nm temperature coefficient of p i f = 30 ma tk p 0.25 nm/k rise time i f = 100 ma, 20 % to 80 % t r 20 ns fall time i f = 100 ma, 20 % to 80 % t f 20 ns cut-off frequency i dc = 70 ma, i ac = 30 ma pp f c 23 mhz virtual source diameter d 1.5 mm
document number: 85194 for technical questions, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.0, 28-jan-10 3 vsmg2000x01, VSMG2020X01 high speed infrared emitting diodes, 850 nm, gaalas, dh vishay semiconductors basic characteristics t amb = 25 c, unless otherwise specified fig. 3 - forward current vs. forward voltage fig. 4 - relative forward voltage vs. ambient temperature fig. 5 - radiant intensity vs. forward current fig. 6 - relative radiant power vs. wavelength fig. 7 - relative radiant intensity vs. angular displacement 1 88 73_1 i f - for w ard c u rrent (ma) 1000 100 10 1 v f - for w ard v oltage ( v ) 024 13 t p = 100 s t p /t = 0.001 90 92 94 96 9 8 100 102 104 106 10 8 110 - 40 - 20 0 20 40 60 8 0 100 t am b - am b ient temperat u re (c) v f, rel - relati v e for w ard v oltage ( % ) i f = 100 ma i f = 10 ma i f = 1 ma 21443 t p = 20 ms 1 10 100 1000 10 100 1000 t p = 100 s t p /t= 0.001 214 8 7 i f - for w ard c u rrent (ma) i e - radiant intensity (m w /sr) 8 00 8 50 ? - w a v elength (nm) 900 16972 0 0.25 0.5 0.75 1.0 1.25 e, rel - relati v e radiant po w er 0.4 0.2 0 i e rel - relati v e radiant intensity 21550 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 ? - ang u lar displacement
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 85194 4 rev. 1.0, 28-jan-10 vsmg2000x01, VSMG2020X01 vishay semiconductors high speed infrared emitting diodes, 850 nm, gaalas, dh solder profile fig. 8 - lead (pb)-free reflow solder profile acc. j-std-020 drypack devices are packed in moisture barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. ea ch bag contains a desiccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated on mbb label: floor life: 4 weeks conditions: t amb < 30 c, rh < 60 % moisture sensitivity leve l 2a, acc. to j-std-020. drying in case of moisture absorpt ion devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry using recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. package dimensions in millimeters: vsmg2000 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperat u re (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp u p 3 c/s max. ramp do w n 6 c/s 19 8 41 255 c 2.2 5. 8 0.2 2.77 0.2 2.3 0.2 cathode 0.5 0.05 0.1 0.254 1.1 0.1 anode 0.4 2.2 0.19 0.3 1.6 0.4 ? 1. 8 0.1 2.3 0.2 specifications according to di n technical dra w ings n ot indicated tolerances 0.1 dra w ing- n o.: 6.544-5391.02-4 iss u e: 1; 26.09.0 8 exposed copper 0.75 6.7 1.7 ? 2.3 0.1 solder pad proposal acc. ipc 7351 21517 z z 20:1 pin id
document number: 85194 for technical questions, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.0, 28-jan-10 5 vsmg2000x01, VSMG2020X01 high speed infrared emitting diodes, 850 nm, gaalas, dh vishay semiconductors package dimensions in millimeters: vsmg2020 2.2 4.2 0.2 2.77 0.2 0.05 0.254 0.6 2.2 0.19 0.3 1.6 0.4 ? 1. 8 specifications according to di n technical dra w ings n ot indicated tolerances 0.1 dra w ing- n o.: 6.544-53 8 3.02-4 iss u e: 3; 26.09.0 8 exposed copper 0.75 2.45 5.15 solder pad proposal acc. ipc 7351 214 88 x x 20:1 cathode anode 0.4 2.3 0.2 2.3 0.2 0.5 pin id
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 85194 6 rev. 1.0, 28-jan-10 vsmg2000x01, VSMG2020X01 vishay semiconductors high speed infrared emitting diodes, 850 nm, gaalas, dh taping and reel dimensions in millimeters : vsmg2000 iss u e: x; 29.04.09 dra w ing- n o.: 9. 8 00-5100.01-4 leader and trailer tape: parts mo u nted empty (400 mm min.) empty (160 mm min.) direction of p u lling o u t unreel direction ? 62 0.5 ? 330 1 reel 2 . 5 0.5 la b el posted here coming o u t from reel tape position x ? 1 3 0.5 12.4 1.5 x 2:1 i ii 6000 pcs/reel 12 0.3 5.5 0.05 1.75 0.1 2 0.05 4 0 . 1 4 0.1 ? 1.55 0.05 3.05 0.1 21572 technical dra w ings according to di n specifications terminal position in tape de v ice lead i lead ii v emd2000 v smb2000 cathode anode v emt2000 v emt2500 collector emitter
document number: 85194 for technical questions, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.0, 28-jan-10 7 vsmg2000x01, VSMG2020X01 high speed infrared emitting diodes, 850 nm, gaalas, dh vishay semiconductors taping and reel dimensions in millimeters : vsmg2020 dra w ing- n o.: 9. 8 00-5091.01-4 leader and trailer tape: parts mo u nted empty (400 mm min.) empty (160 mm min.) direction of p u lling o u t unreel direction ? 62 0.5 ? 330 1 reel 2 . 5 0.5 la b el posted here coming o u t from reel tape position x ? 13 0.5 12.4 1.5 x 2:1 i ii 6000 pcs/reel 12 0.3 5.5 0.05 1.75 0.1 2 0.05 4 0.1 4 0.1 ? 1.55 0.05 3.05 0.1 terminal position in tape 21571 technical dra w ings according to di n specifications iss u e: x; 29.04.09 de v ice lead i lead ii v smb2020 v emd2020 cathode anode v emt2020 v emt2520 collector emitter
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